Infineon Technologies Americas Staff Engineer, Igbt Device Design Salary

Infineon Technologies Americas Staff Engineer, Igbt Device Design average salary is $103,285, median salary is $103,285 with a salary range from $103,285 to $103,285.
Infineon Technologies Americas Staff Engineer, Igbt Device Design salaries are collected from government agencies and companies. Each salary is associated with a real job position. Infineon Technologies Americas Staff Engineer, Igbt Device Design salary statistics is not exclusive and is for reference only. They are presented "as is" and updated regularly.

Low: 103,285

Average: 103,285

Median: 103,285

High: 103,285

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Jobtitle	Company	Salary	City	Year
Staff Engineer, Igbt Device Design	Infineon Technologies Americas	$ 103,285	El Segundo, CA, 90245	12/14/2016

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Infineon Technologies Americas Staff Engineer, Igbt Device Design salary is full-time annual starting salary. Intern, contractor and hourly pay scale vary from regular exempt employee. Compensation depends on work experience, job location, bonus, benefits and other factors.

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