- Low
- 95,000
- Average
- 100,980
- Median
- 100,980
- High
- 106,960
Thinsilicon Salary
25
71
33
Thinsilicon average salary is $100,980, median salary is $100,980 with a salary range from $95,000 to $106,960.
Thinsilicon salaries are collected from government agencies and companies. Each salary is associated with a real job position. Thinsilicon salary statistics is not exclusive and is for reference only. They are presented "as is" and updated regularly.
Thinsilicon salaries are collected from government agencies and companies. Each salary is associated with a real job position. Thinsilicon salary statistics is not exclusive and is for reference only. They are presented "as is" and updated regularly.
| Job Title | Salaries | City | Year | More info |
| Interaction Designer | 106,960-106,960 | San Francisco, CA, 94101 | 2018 | Thinsilicon Interaction Designer Salaries (1) Thinsilicon San Francisco, CA Salaries |
| Associate Interaction Designer | 95,000-95,000 | San Francisco, CA, 94101 | 2016 | Thinsilicon Associate Interaction Designer Salaries (1) Thinsilicon San Francisco, CA Salaries |
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Thinsilicon salary is full-time annual starting salary. Intern, contractor and hourly pay scale vary from regular exempt employee. Compensation depends on work experience, job location, bonus, benefits and other factors.
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Thinsilicon... Information
- ThinSilicon Corp
- Industry: Other
- City: Mountain View, CA
- We are a Silicon-Valley based company that has developed a differentiated thin-film silicon solar cell architecture that improves module efficiency, manufacturing throughput, and capital efficiency relative to the existing thin-film silicon manufacturing base. Our technology development efforts are centered on the Applied Materials SunFab toolset and are also compatible with options provided by Oerlikon Solar and Ulvac Technologies, Inc. ThinSilicon's core technology will allow for the production of the world's highest value PV modules. Our world-class team of employees, technical advisors, and strategic tool set has allowed us to rapidly develop improved processes for each of the critical layers in
