- Low
- 120,120
- Average
- 120,120
- Median
- 120,120
- High
- 120,120
Infineon Technologies Americas Gan Device Design Engineer Salary
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Infineon Technologies Americas Gan Device Design Engineer average salary is $120,120, median salary is $120,120 with a salary range from $120,120 to $120,120.
Infineon Technologies Americas Gan Device Design Engineer salaries are collected from government agencies and companies. Each salary is associated with a real job position. Infineon Technologies Americas Gan Device Design Engineer salary statistics is not exclusive and is for reference only. They are presented "as is" and updated regularly.
Infineon Technologies Americas Gan Device Design Engineer salaries are collected from government agencies and companies. Each salary is associated with a real job position. Infineon Technologies Americas Gan Device Design Engineer salary statistics is not exclusive and is for reference only. They are presented "as is" and updated regularly.
| Jobtitle | Company | Salary | City | Year |
| Gan Device Design Engineer | Infineon Technologies Americas | $ 120,120 | El Segundo, CA, 90245 | 01/13/2016 |
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Infineon Technologies Americas Gan Device Design Engineer salary is full-time annual starting salary. Intern, contractor and hourly pay scale vary from regular exempt employee. Compensation depends on work experience, job location, bonus, benefits and other factors.
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