Silicon Carbide Process Development Engineer Salary

Silicon Carbide Process Development Engineer average salary is $84,000, median salary is $- with a salary range from $- to $-.
Silicon Carbide Process Development Engineer salaries are collected from government agencies and companies. Each salary is associated with a real job position. Silicon Carbide Process Development Engineer salary statistics is not exclusive and is for reference only. They are presented "as is" and updated regularly.

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Average: 84,000

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High: -

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Company	Salaries	City	Year	More info
Stantec Energy And Resources	84,000-84,000	Lubbock, TX, 79401	2018	Stantec Energy And Resources Silicon Carbide Process Development Engineer Salaries (1) Silicon Carbide Process Development Engineer Lubbock, TX Salaries

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Silicon Carbide Process Development Engineer salary is full-time annual starting salary. Intern, contractor and hourly pay scale vary from regular exempt employee. Compensation depends on work experience, job location, bonus, benefits and other factors.

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