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- Median
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Silicon Carbide/wide Band Gap Power Device Integration Eng'r Salary
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Silicon Carbide/wide Band Gap Power Device Integration Eng'r average salary is $84,000, median salary is $- with a salary range from $- to $-.
Silicon Carbide/wide Band Gap Power Device Integration Eng'r salaries are collected from government agencies and companies. Each salary is associated with a real job position. Silicon Carbide/wide Band Gap Power Device Integration Eng'r salary statistics is not exclusive and is for reference only. They are presented "as is" and updated regularly.
Silicon Carbide/wide Band Gap Power Device Integration Eng'r salaries are collected from government agencies and companies. Each salary is associated with a real job position. Silicon Carbide/wide Band Gap Power Device Integration Eng'r salary statistics is not exclusive and is for reference only. They are presented "as is" and updated regularly.
| Company | Salaries | City | Year | More info |
| Stantec Energy And Resources | 84,000-84,000 | Lubbock, TX, 79401 | 2016 | Stantec Energy And Resources Silicon Carbide/wide Band Gap Power Device Integration Eng'r Salaries (1) Silicon Carbide/wide Band Gap Power Device Integration Eng'r Lubbock, TX Salaries |
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Silicon Carbide/wide Band Gap Power Device Integration Eng'r salary is full-time annual starting salary. Intern, contractor and hourly pay scale vary from regular exempt employee. Compensation depends on work experience, job location, bonus, benefits and other factors.
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知识产权销售/顾问（商标/专利/版权）工资专利情报员工资专利管培生（理工科）工资 Silicon Carbide/wide Band G... Jobs
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